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| MCC Features ER3AB omponents 21201 Itasca Street Chatsworth !"# $ % !"# THRU ER3JB * * * * * For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250C for 10 Seconds At Terminals\ Super Fast Recovery Times For High Effieciency 3 Amp Super Fast Recovery Silicon Rectifier 50 to 600 Volts DO-214AA (SMBJ) (LEAD FRAME) A Maximum Ratings * * * Operating Temperature: -50C to +150C Storage Temperature: -50C to +150C Maximum Thermal Resistance; 16 C/W Junction To Lead MCC Catalog Number ER3AB ER3BB ER3CB ER3DB ER3GB ER3JB Device Marking Maximum Recurrent Peak Reverse Voltage 50V 100V 150V 200V 400V 600V Maximum RMS Voltage 35V 70V 105V 140V 280V 420V Maximum DC Blocking Voltage 50V 100V 150V 200V 400V 600V B ER3AB ER3BB ER3CB ER3DB ER3GB ER3JB C F H D G E Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage ER3AB-3DB ER3GB ER3JB Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IF(AV) IFSM 3.0A 100A TL = 75C 8.3ms, half sine DIM A B C D E F G H DIMENSIONS INCHES MIN .160 .130 .006 .030 .200 .079 .075 .002 MM MIN 4.06 3.30 0.15 0.76 5.08 2.01 1.91 0.05 MAX .185 .155 .012 .060 .220 .103 .087 .008 MAX 4.70 3.94 0.31 1 ..52 5.59 2.62 2.21 0.203 NOTE VF .95V 1.25V 1.70V 5A 200A 35ns 45pF IFM = 3.0A; TJ = 25C SUGGESTED SOLDER PAD LAYOUT 0.106 IR TJ = 25C TJ = 100C IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V 0.083" Trr CJ 0.050" *Pulse test: Pulse width 300 sec, Duty cycle 2% www mccsemi.com . ER3AB thru ER3JB Figure 1 Typical Forward Characteristics 100 60 40 20 10 6 4 2 25C Amps 1 .5 .6 .4 .2 .1 .06 .04 .02 .01 .4 .6 .8 1.0 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 1.2 1.4 1.6 0 ER3JB Amps 1.0 1.5 ER3AB-3DB ER3EB-3GB 2.0 2.5 3.0 Figure 2 Forward Derating Curve MCC Single Phase, Half Wave 60Hz Resistive or Inductive Load 40 60 80 100 C Average Forward Rectified Current - Amperes versus Lead Temperature - C 120 140 160 100 60 40 20 pF TJ=25C 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 Junction Capacitance - pFversus Reverse Voltage - Volts www.mccsemi.com ER3AB thru ER3JB Figure 4 Typical Reverse Characteristics 1000 600 400 200 100 60 75 40 20 25 Amps 10 0 6 4 2 1 .6 .4 TJ=25C .2 .1 20 40 60 80 Volts Instantaneous Reverse Leakage Current - MicroAmperes versus Percent Of Rated Peak Reverse Voltage - Volts Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 10 trr +0.5A 100 120 140 TJ=75C 1 2 4 6 Amps 50 TJ=100C 100 MCC Figure 5 Peak Forward Surge Current 150 125 8 10 Cycles 20 40 60 80 100 Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 0 25Vdc Pulse Generator Note 2 1 Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive www.mccsemi.com |
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